Photosensitivity of ZnO/CuIn3Se5 heterostructures at γ-radiation
Identifieur interne : 000141 ( Russie/Analysis ); précédent : 000140; suivant : 000142Photosensitivity of ZnO/CuIn3Se5 heterostructures at γ-radiation
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Abstract
The effect of γ-ray radiation (60Co) on the photosensitivity of ZnO/CuIn3Se5 heterojunctions is studied for the first time. It is established that the spectral dependence of photoconversion efficiency is retained if the heterojunctions are irradiated with γ-ray fluxes no higher than 2 x 1019 photon/cm2. Dependences of the open-circuit pohotovoltage and the short-circuit current on the γ-photon flux are studied. It is shown that the photoelectric parameters of the heterojunctions remain unchanged under irradiation with the fluxes ϕ<1017 photon/cm2, in contrast, if the flux increases in the region of ϕ>1017 photon/ cm2, the photocurrent decreases monotonically, while the photovoltage exhibits a maximum, after which the photovoltage returns to the initial value. The potential for using the ZnO/CuIn3Se5 heterojunctions under the conditions of a high background radiation is established.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Photosensitivity of ZnO/CuIn<sub>3</sub>Se<sub>5</sub> heterostructures at γ-radiation</title><author><name sortKey="Emtsev, V V" uniqKey="Emtsev V">V. V. Emtsev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physicotechnical Institute, Russian Academy of Sciences</s1><s2>St Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Nikolaev, Yu A" uniqKey="Nikolaev Y">Yu. A. Nikolaev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physicotechnical Institute, Russian Academy of Sciences</s1><s2>St Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Poloskin, D S" uniqKey="Poloskin D">D. S. Poloskin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physicotechnical Institute, Russian Academy of Sciences</s1><s2>St Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Terukov, E I" uniqKey="Terukov E">E. I. Terukov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physicotechnical Institute, Russian Academy of Sciences</s1><s2>St Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Bodnar, I V" uniqKey="Bodnar I">I. V. Bodnar</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Belarussian State University of Informatics and Radioelectronics</s1><s2>Minsk 220030</s2><s3>BLR</s3><sZ>5 aut.</sZ></inist:fA14><country>Biélorussie</country><wicri:noRegion>Belarussian State University of Informatics and Radioelectronics</wicri:noRegion></affiliation></author><author><name sortKey="Rud, V Yu" uniqKey="Rud V">V. Yu. Rud</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>St Petersburg State Polytechnical University, 29 Polytekhnicheskaya</s1><s2>St Petersburg 195251</s2><s3>RUS</s3><sZ>6 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St Petersburg 195251</wicri:noRegion></affiliation></author><author><name sortKey="Rud, Yu V" uniqKey="Rud Y">Yu. V. Rud</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physicotechnical Institute, Russian Academy of Sciences</s1><s2>St Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St Petersburg 194021</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">10-0067707</idno><date when="2009">2009</date><idno type="stanalyst">PASCAL 10-0067707 INIST</idno><idno type="RBID">Pascal:10-0067707</idno><idno type="wicri:Area/Main/Corpus">004A71</idno><idno type="wicri:Area/Main/Repository">004D87</idno><idno type="wicri:Area/Russie/Extraction">000141</idno></publicationStmt><seriesStmt><idno type="ISSN">0921-4526</idno><title level="j" type="abbreviated">Physica, B Condens. matter</title><title level="j" type="main">Physica. B, Condensed matter</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Copper Indium Selenides Mixed</term><term>Gamma irradiation</term><term>Heterostructures</term><term>Photoconductivity</term><term>Photoelectric effect</term><term>Photosensitivity</term><term>Photovoltaic effects</term><term>Radiation effects</term><term>Semiconductor materials</term><term>Short circuit currents</term><term>Zinc oxide</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Photosensibilité</term><term>Effet rayonnement</term><term>Courant court circuit</term><term>Effet photoélectrique</term><term>Photoconductivité</term><term>Effet photovoltaïque</term><term>Irradiation gamma</term><term>Cuivre Indium Séléniure Mixte</term><term>Oxyde de zinc</term><term>Hétérostructure</term><term>Semiconducteur</term><term>ZnO</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The effect of γ-ray radiation (<sup>60</sup>Co) on the photosensitivity of ZnO/CuIn<sub>3</sub>Se<sub>5</sub> heterojunctions is studied for the first time. It is established that the spectral dependence of photoconversion efficiency is retained if the heterojunctions are irradiated with γ-ray fluxes no higher than 2 x 10<sup>19</sup> photon/cm<sup>2</sup>. Dependences of the open-circuit pohotovoltage and the short-circuit current on the γ-photon flux are studied. It is shown that the photoelectric parameters of the heterojunctions remain unchanged under irradiation with the fluxes ϕ<10<sup>17 </sup>photon/cm<sup>2</sup>, in contrast, if the flux increases in the region of ϕ>10<sup>17</sup> photon/ cm<sup>2</sup>, the photocurrent decreases monotonically, while the photovoltage exhibits a maximum, after which the photovoltage returns to the initial value. The potential for using the ZnO/CuIn<sub>3</sub>Se<sub>5</sub> heterojunctions under the conditions of a high background radiation is established.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0921-4526</s0></fA01><fA03 i2="1"><s0>Physica, B Condens. matter</s0></fA03><fA05><s2>404</s2></fA05><fA06><s2>23-24</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Photosensitivity of ZnO/CuIn<sub>3</sub>Se<sub>5</sub> heterostructures at γ-radiation</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the 25th International Conference on Defects in Semiconductors: ICDS-25</s1></fA09><fA11 i1="01" i2="1"><s1>EMTSEV (V. V.)</s1></fA11><fA11 i1="02" i2="1"><s1>NIKOLAEV (Yu. A.)</s1></fA11><fA11 i1="03" i2="1"><s1>POLOSKIN (D. S.)</s1></fA11><fA11 i1="04" i2="1"><s1>TERUKOV (E. I.)</s1></fA11><fA11 i1="05" i2="1"><s1>BODNAR (I. V.)</s1></fA11><fA11 i1="06" i2="1"><s1>RUD (V. Yu.)</s1></fA11><fA11 i1="07" i2="1"><s1>RUD (Yu. V.)</s1></fA11><fA12 i1="01" i2="1"><s1>BAGRAEV (Nikolay T.)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>EMTSEV (Vadim V.)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>ESTREICHER (Stefan K.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Ioffe Physicotechnical Institute, Russian Academy of Sciences</s1><s2>St Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="02"><s1>Belarussian State University of Informatics and Radioelectronics</s1><s2>Minsk 220030</s2><s3>BLR</s3><sZ>5 aut.</sZ></fA14><fA14 i1="03"><s1>St Petersburg State Polytechnical University, 29 Polytekhnicheskaya</s1><s2>St Petersburg 195251</s2><s3>RUS</s3><sZ>6 aut.</sZ></fA14><fA15 i1="01"><s1>Ioffe Institute</s1><s2>St. Petersburg</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA15><fA15 i1="02"><s1>Texas Tech University</s1><s3>USA</s3><sZ>3 aut.</sZ></fA15><fA20><s1>4839-4841</s1></fA20><fA21><s1>2009</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>145B</s2><s5>354000171516490920</s5></fA43><fA44><s0>0000</s0><s1>© 2010 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>12 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>10-0067707</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physica. B, Condensed matter</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>The effect of γ-ray radiation (<sup>60</sup>Co) on the photosensitivity of ZnO/CuIn<sub>3</sub>Se<sub>5</sub> heterojunctions is studied for the first time. It is established that the spectral dependence of photoconversion efficiency is retained if the heterojunctions are irradiated with γ-ray fluxes no higher than 2 x 10<sup>19</sup> photon/cm<sup>2</sup>. Dependences of the open-circuit pohotovoltage and the short-circuit current on the γ-photon flux are studied. It is shown that the photoelectric parameters of the heterojunctions remain unchanged under irradiation with the fluxes ϕ<10<sup>17 </sup>photon/cm<sup>2</sup>, in contrast, if the flux increases in the region of ϕ>10<sup>17</sup> photon/ cm<sup>2</sup>, the photocurrent decreases monotonically, while the photovoltage exhibits a maximum, after which the photovoltage returns to the initial value. The potential for using the ZnO/CuIn<sub>3</sub>Se<sub>5</sub> heterojunctions under the conditions of a high background radiation is established.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70C63</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Photosensibilité</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Photosensitivity</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Effet rayonnement</s0><s5>04</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Radiation effects</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Courant court circuit</s0><s5>05</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Short circuit currents</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Effet photoélectrique</s0><s5>06</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Photoelectric effect</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Photoconductivité</s0><s5>08</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Photoconductivity</s0><s5>08</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Effet photovoltaïque</s0><s5>09</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Photovoltaic effects</s0><s5>09</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Irradiation gamma</s0><s5>10</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Gamma irradiation</s0><s5>10</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Irradiación gama</s0><s5>10</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Cuivre Indium Séléniure Mixte</s0><s2>NC</s2><s2>NA</s2><s5>11</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Copper Indium Selenides Mixed</s0><s2>NC</s2><s2>NA</s2><s5>11</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Mixto</s0><s2>NC</s2><s2>NA</s2><s5>11</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Oxyde de zinc</s0><s5>15</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Zinc oxide</s0><s5>15</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Zinc óxido</s0><s5>15</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Hétérostructure</s0><s5>16</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Heterostructures</s0><s5>16</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Semiconducteur</s0><s5>18</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>18</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>ZnO</s0><s4>INC</s4><s5>52</s5></fC03><fN21><s1>046</s1></fN21></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>International Conference on Defects in Semiconductors (ICDS)</s1><s2>25</s2><s3>Saint Petersburg RUS</s3><s4>2009-07-20</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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